Main Page > MS (Physics) 2-Years Program (Self Support) > MICROELECTRONICS AND SEMICONDUCTOR DEVICES
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MICROELECTRONICS AND SEMICONDUCTOR DEVICES
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Semiconductor Material and Device Fabrication: Silicon and other semiconductors as device materials; Effect on carrier lifetime and mobility; bulk crystal growth; effect of segration coefficient, GaAs crystal growth techniques, crystal characterization, epitaxial growth, with molecular beam epitaxy and multiplayer structures, defects in epitaxial layers. Active regions; Dopants and their limits of solubility; diffusion doping, thermal oxidation, dielectric and polysilicon deposition, metallization, wet and dry etching, optical and next-generation lithographic methods, Schottky and ohmic contacts; Process modeling: SUPREM and MicroTec; SIA ‘roadmap’. Devices and Circuits: FET devices and theory; MOSFET; MOS capacitor, accumulation, depletion and inversion modes, enhancement and depletion modes of operation; n-and p-channel devices; I-V operating relations in active and saturation regions, threshold voltage, NMOS and CMOS inverters, gates and flip-flops, implication for performance of scaling down device size, GaAs FET; principle of operation, linear and saturation characteristics, GaAs FET physical and impirical modeling. Non-ideal effects in Devices: Deep level effects; Electronic transitions probabilities, deep states, principal of conventional DLTS, determination of deep traps parameters, Noise performance; sources of noise, low frequency g-r noise, output conductance and transconductance dispersion in devices. Alternative Device Structures: Heterostructures HEMTs and HBTs, thyristor and related power devices, Devices and applications, nanostructures devices. |
| Credit hours/ Marks:- 3 |
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